The STR-G6651 is specifically designed to satisfy the requirements for increased integration and reliability in off-line quasi-resonant flyback converters. This device incorporates the primary control and drive circuit with a discrete avalanche-rated power MOSFET.

Cycle-by-cycle current limiting, under-voltage lockout with hysteresis, over-voltage protection, and thermal shutdown protects the power supply during the normal overload and fault conditions. Over-voltage protection and thermal shutdown are latched after a short delay. The latch may be reset by cycling the input supply. Low-current startup and a low-power standby mode selected from the secondary circuit completes a comprehensive suite of features. The device is provided in a five-pin over-molded TO-220 style package, affording dielectric isolation without compromising thermal characteristics. Two lead forms are available (with and without the suffix `-LF') to accommodate printed wiring board layout or mechanical constraints. Proven in substantial volumes, the is a robust low-risk solution for off-line power supplies particularly where management of EMI at the source is a significant element of the system design.

Control Supply Voltage, VIN. 35 V Drain-Source Voltage, VDS. 650 V Drain Current, ID continuous. 2.7 A single-pulse, tw 1 ms. 7.2 A Avalanche Energy, EAS single-pulse. 158 mJ Over-Current Protection Voltage Range, VOCP. +6 V Insulation RMS Voltage, VWM(RMS). 2000 V Package Power Dissipation, PD control (VIN x IIN(ON)). 0.8 W total. See Graph FET Channel Temperature, TJ. +150°C Internal Frame Temperature, TF. +125°C Operating Temperature Range, TA. to +125°C Storage Temperature Range, TS. to +125°C

I Quasi-Resonant Operation I Output Power W I Low-Loss, Pulse-Ratio-Control Standby Mode I Temperature-Compensated Pulse-by-Pulse Over-Current Protection I Latched Over-Voltage and Thermal Protection I Under-Voltage Lockout with Hysteresis I Active Low-Pass Filter for Enhanced Light-Load Stability I Switched Attenuation of Leading-Edge Current-Sensing Signal I Regulated Soft Gate Drive I Adjustable Switching Speed for EMI Control I Overmolded Five-Pin Package

115 Northeast Cutoff, Box 15036 Worcester, Massachusetts (508) 853-5000 Copyright 1999, 2000 Allegro MicroSystems, Inc.

ELECTRICAL CHARACTERISTICS = +25°C, VIN 18 V, VDD = 0, voltage measurements are referenced to ground terminal (unless otherwise specified).

Limits Characteristic On-State Voltage Under-Voltage Lockout Over-Voltage Threshold Drain-Source Breakdown Voltage Drain Leakage Current On-State Resistance Maximum OFF Time Minimum Pulse Duration for Input of Quasi-Resonant Signals Minimum OFF Time Feedback Threshold Voltage Symbol VINT VINQ VOVP(th) V(BR)DSS IDSS rDS(on) toff tw(th) toff VFDBK Test Conditions Turn-on, increasing VIN Turn-off, decreasing VIN Turn-off, increasing VIN 300 µA VDS = +25°C Drain waveform high Drain waveform high1 Drain waveform high1 Drain waveform low to high1 Oscillation synchronized2 Over-Current Protection/Feedback Sink Current Latch Holding Current Latch Release Voltage Switching Time Supply Current IOCP/FB IIN(OVP) VIN tf IIN(ON) IIN(OFF) Insulation RMS Voltage Thermal Shutdown Thermal Resistance VWM(RMS) TJ RJM Output junction-to-mounting frame VOCP/FB 1.0 V VIN reduced from 8.5 V IIN 20 µA, VIN reduced from 24.5 V VDD A Operating3 Increasing VIN prior to oscillation All terminals simultaneous reference metal plate against backside Min. Typ. Max. Units V °C °C/W

Notes: Typical Data is for design information only. 1. Feedback is square wave, VIM = 1 µs, µs 2. For quasi-resonant operation, the input signal must be longer than tw(th) and greater than VFDBK 3. Feedback is square wave, VIM = 4 µs, 1 µs

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